The anisotropic etch rate in the <100> direction of monocrystalline silicon of <100> orientated wafers was investigated focusing on the dependence of temperature and concentration of potassium hydroxide. The rate was found to be inversely proportional to the KOH concentration and directly proportional to the temperature. Advantages and disadvantages of the different etching conditions are anisotropic direction selectivity, speed, and surface roughness of the pattern. The goal of this project was to characterize anisotropic etching with potassium hydroxide in the <100> direction so that etching with KOH could be used as an alternate method in making micromechanical devices.
Tahllee Baynard, ’97
Sponsor: Cynthia Strong